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| SI4426DY New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.025 @ VGS = 4.5 V 0.035 @ VGS = 2.5 V ID (A) "8.5 "7.1 D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "12 "8.5 "6.8 "40 2.1 2.5 1.6 Steady State Unit V "6.5 "5.2 A 2.1 1.5 0.9 -55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71107 S-01041--Rev. B, 15-May-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 38 70 20 Maximum 50 85 25 Unit _C/W 2-1 SI4426DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 8.5 A VGS = 2.5 V, ID = 7.1 A VDS = 10 V, ID = 8.5 A IS = 2.1 A, VGS = 0 V 40 0.019 0.025 27 0.8 1.2 0.025 0.035 S V 0.6 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 10 V RG = 6 W A V, VDS = 10 V, VGS = 4 5 V ID = 8.5 A V 4.5 V, 85 25 6.5 4 40 40 90 40 40 60 60 150 60 60 ns 50 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5 thru 3 V 2.5 V 30 I D - Drain Current (A) I D - Drain Current (A) 30 40 Transfer Characteristics 20 2V 10 20 TC = 125_C 10 25_C 1, 1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 0.5 1.0 1.5 -55_C 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71107 S-01041--Rev. B, 15-May-00 SI4426DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 4000 Vishay Siliconix Capacitance r DS(on)- On-Resistance ( W ) 0.08 C - Capacitance (pF) 3200 Ciss 2400 0.06 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V 1600 Coss 800 Crss 0 0 10 20 ID - Drain Current (A) 30 40 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 8.5 A 4 1.4 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 8.5 A r DS(on) - On-Resistance (W) (Normalized) 10 15 20 25 1.3 1.2 3 1.1 2 1.0 1 0.9 0 0 5 Qg - Total Gate Charge (nC) 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 TJ = 25_C r DS(on) - On-Resistance ( W ) 0.08 0.06 ID = 8.5 A 0.04 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Document Number: 71107 S-01041--Rev. B, 15-May-00 www.vishay.com S FaxBack 408-970-5600 2-3 SI4426DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA 40 Power (W) -0.0 30 -0.2 20 -0.4 10 -0.6 -50 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71107 S-01041--Rev. B, 15-May-00 |
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